description of part number p thy r istor for circuit prote c tion part number p 310 0 l b code main suffix product type product type p type median voltage rating code median voltage rating 310 310 v construction variable code product shape 0 one chip 1 unidirectional part 2 two chips 3 three chips package type code package type e t o ?9 2 m d o -27 s s m b/ do?214aa r s m a/do-214ac l do -15 ipp ra ting cod e ipp ra ting b 2 5 0 a ( 8 x 2 0 s) c 4 0 0 a ( 8 x 2 0 s) d 1000 a (8x20 s) a 1 5 0 a (8x20 s) applica t ions whe n prote c t i ng telecom m unication circuits, p device s are conn ected a c ro ss tip and ring for metallic protection and a c ro ss ti p and g r oun d and rin g an d grou nd for l ongitudi nal protection. the y typically are place d behi n d some type of curren t-limiting devi c e. co mmon appli c ation s inclu de: ? central office line ca rd s (slics) ? t-1/e-1, isdn, an d xdsl transmissio n equipm ent ? custome r p r emi s e s equi pment (cpe) su ch a s pho n e s, mode ms, and caller id adjun ct boxe s ? pbxs, ksu s, and other switches ? primary prot ection in clu d ing main di stri bution fram es, five-pin mod u les, buil d ing entran c e e qui pment, and st ation prote c tion mo dule s ? dat a lines a nd se cu rit y sy st em s ? catv line amplifiers and power in se rte r s ? s p rinkle r sy st em s thyri stor/do-15 ser ies rev.201 4 . 05 . 01 01 | www.spsemi.cn
p device ? se r i e s ? do - 1 5 p solid stat e prote c tion device s prote c t t e le c o m m u ni c at i o n s e q u i p m ent s u c h as modem s, line card s, fax machi n e s , and other cpe. p devices are u s ed to e nable e quipm ent to meet variou s regul atory req u ire m ents in cludi n g gr 10 89, itu k.20, k.21 and k.45, iec 609 50, ul 6095 0, and t i a-968 (fo r me rly kno w n a s fcc pa rt 68). electrical parameters p a r t number * v d r m v o l t s v s v o l t s v t v o l t s i d r m a m p s i s m a m p s i t a m p s * * i h m a m p s c o p f p 0 0 8 0 l _ 6 2 5 4 5 8 0 0 2 . 2 5 0 50-125 p 0 3 0 0 l _ 2 5 4 0 4 5 8 0 0 2 . 2 1 5 0 70-175 p 0 6 4 0 l _ 5 8 7 7 4 5 8 0 0 2 . 2 1 5 0 55-140 p 0 7 2 0 l _ 6 5 8 8 4 5 8 0 0 2 . 2 1 5 0 55-140 p 0 9 0 0 l _ 7 5 9 8 4 5 8 0 0 2 . 2 1 5 0 55-140 p 2 3 0 0 l _ 1 9 0 2 6 0 4 5 8 0 0 2 . 2 1 5 0 45-115 p 2 6 0 0 l _ 2 2 0 3 0 0 4 5 8 0 0 2 . 2 1 5 0 40-100 p 3 1 0 0 l _ 2 7 5 3 5 0 4 5 8 0 0 2 . 2 1 5 0 35-90 p 3 5 0 0 l _ 3 2 0 4 0 0 4 5 8 0 0 2 . 2 1 5 0 30-75 surge ratings s e r i e s i p p 2 x 1 0 s a m p s i p p 8 x 2 0 s a m p s i p p 1 0 x 1 6 0 s a m p s i p p 1 0 x 5 6 0 s a m p s i p p 1 0 x 1 0 0 0 s a m p s i t s m 6 0 h z a m p s d i / d t a m p s / s a 1 5 0 1 5 0 9 0 5 0 4 5 2 0 5 0 0 b 2 5 0 2 5 0 1 5 0 1 0 0 8 0 3 0 5 0 0 c 5 0 0 4 0 0 2 0 0 1 5 0 1 0 0 5 0 5 0 0 thermal considerations p a c k a g e d o- 1 5 symbol para mete r value unit t j o p e r a t i n g j u n c t i o n t e m p e r a t u r e - 4 0 t o + 1 5 0 c t s s t o r a g e t e m p e r a t u r e r a n g e - 6 5 t o + 1 5 0 c r b j a t h e r m a l resistance: junction to ambient 9 0 c /w 1 . 0 (2 5.4 ) m i n . 0 . 1 4 0 ( 3 . 6 ) 0 . 1 0 4 ( 2 . 6 ) d i a . 0 . 03 4 ( 0. 8 6) 0 . 02 8 ( 0. 7 1) d i a . d o - 2 0 4 a c (d o-15) d i m e n s i o n s i n i n c h e s a n d ( m i l l i m e t e r s ) 0 . 3 0 0 ( 7 . 6 ) 0 . 2 3 0 ( 5 . 8 ) 1 . 0 (2 5.4 ) m i n . 2 9 * f or i nd i vi d ual ? l a ? , ? l b ? , a nd ? l c ? s urge rat i ng s , s ee t abl e bel o w thyristor/do-15 ser ies rev.201 4 . 05 . 01 0 2 | www.spsemi.cn
the basic characteristic of the p ? the principle introduction operation in the standby mode, p devices exhi bit a high off-state impeda nce, eliminati ng exce ssive leakag e cu rrents and appearing transparent to the circuits they protec t. upon application of a voltage exceeding the switching voltage (v s ), p devices cro w b a r an d simulate a sh ort circuit co n d ition until the curre n t flowing throug h the device is either interrupted or drops below the p device?s hol ding current (i h ). once this occurs, p device s reset and return to their high off-state impedance. figure1 v-i characteristics figure2 tr x td pulse wave-form figure3 normalized v s change versus junction temperature figure4 normalized dc holdin g current thyristor/do-15 ser ies rev.201 4 . 05 . 01 0 3 | www.spsemi.cn
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